Formation Mechanism of Voids and Oxide Precipitates in Silicon Crystals（Invited Paper）

Formation Mechanism of Voids and Oxide Precipitates in Silicon Crystals（Invited Paper）

Author(s):

Publication title:

High purity silicon VIII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-05

Pub. Year:

2004

Page(from):

237

Page(to):

253

Pages:

17

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774185 [1566774187]

Language:

English

Call no.:

E23400/200405

Type:

Conference Proceedings

Details

TDL ID:	ZA00015395
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	8th ; 206th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2004.10.03-2004.10.08

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