Blank Cover Image

Microstructure Evolution and Breakdown Mechanism Studies in MOSFET with Ultra Thin Gate Dielectrics in Nanometer Technology ERA

Author(s):
Publication title:
Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-04
Pub. Year:
2004
Page(from):
404
Page(to):
417
Pages:
14
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774178 [1566774179]
Language:
English
Call no.:
E23400/200404
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Characterization of Microstructural and Oxide Damage of Breakdown Spot in MOSFETs Using Nano-Analytical Techniques

K. L. Pey, C. H. Tung, L. Tang

Electrochemical Society
7 Conference Proceedings Mechanisms for Microstructure Evolution in Electroplated Copper Thin Films

Harper, J. M. E., Cabral, C., Jr., Andricacos, P. C., Gignac, L., Noyan, I. C., Rodbell, K. P., Hu, C. K.

MRS - Materials Research Society
2 Conference Proceedings Influence of Oxide Breakdown Percolation Resistance on MOSFETS

K. Pey, V. Lo, C. Tung, W. Lim, D. Ang

Electrochemical Society
8 Conference Proceedings Mechanisms for Microstructure Evolution in Electroplated Copper Thin Films

Cabral, C., Gignac, L., Harper, J. N. E., Hu, C. K., Noyan, I. C., ricacos, P. C., Rodbell, K. P.

Materials Research Society
3 Conference Proceedings Enabling Single-Wafer Process Technologies for Reliable Ultra-Thin Gate Dielectrics

Miner, G., Xing, G., Joo, H.S., Sonchez, F., Yokoa, Y., Chen, C., Lopes, D., Balakrishna, A.

Electrochemical Society
9 Conference Proceedings Evaluation of ultra-thin double gate MOSFETs for the 45 nm technology node

Barin, N., Fiegna, C., Esseni, D., Sangiorgi, E.

Electrochemical Society
4 Conference Proceedings Total dose radiation hardness of double-gate ultra-thin SOI MOSFETs

Cirba, C.R., Cristoloveanu, S., Schrimpf, R.D., Feldman, L.C., Fleetwood, D.M., Galloway, K.F.

Electrochemical Society
10 Conference Proceedings Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H., Arai, K.

Trans Tech Publications
5 Conference Proceedings Fundamental Issues in Rapid Thermal Annealing (RTA), Spike RTA and Excimer Laser Annealing (ELA) for the Formation of Shallow p+/n Junctions

Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Tung, C.H., Lu, Y.F.

Electrochemical Society
11 Conference Proceedings Characteristics of Ultra Thin (EOT<1 nm) RTCVD Zr Silicate (Zr 27Si 10O 63) Gate Dielectrics

Lee, C.H., Luan, H.F, Bat, W.P., Lee, S.J., Jean, T.S., Roberts, D., Kwong, D.L.

Electrochemical Society
6 Conference Proceedings Evaluation of Ultra-Thin Gate Evaluation of Ultra-Thin Gate Stack Dielectrics for 0.1 jim PMOSFETs

Srivastava, A., Osburn, C.M., Yee, K.F., Heinisch, H.H., Vogel, E.M, Abmed, K.Z., Wang, Z., Min, K., TimberJoke, B., …

Electrochemical Society
12 Conference Proceedings Thermal Studies on Stress-Induced Void-Like Defects in Epitaxial-CoSi2 Formation

Ho, C. S., Pey, K. L., Tung, C. H., Tee, K. C., Prasad, K., Saigal, D., Tan, J. J. L., Wong, H., Lee, K. H., Osipowicz, …

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12