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A Study of Aluminum Gate La2O3 nMISFET with Post Metallization Anneal

Author(s):
Publication title:
Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-04
Pub. Year:
2004
Page(from):
369
Page(to):
380
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774178 [1566774179]
Language:
English
Call no.:
E23400/200404
Type:
Conference Proceedings

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