Blank Cover Image

53 Optimizing Channel Strain and Dislocations in PMOS Transistors with Local Epitaxial SiGe

Author(s):
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-05
Pub. Year:
2005
Page(from):
437
Page(to):
445
Pages:
9
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774635 [1566774632]
Language:
English
Call no.:
E23400/200505
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings (3.6) 5:20 - 5:40 PM - Epitaxially Strained SiGe Process to Improve Mobility in the PMOS Transistor

Chidambaram, P., Smith, B., Hall, L., Bu, H., Chakravarthi, S., Kim, Y., Samoilov, A., Kim, A., Jones, P., Irwin, R., …

Electrochemical Society
7 Conference Proceedings Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results

M. Kim, J. Huang, P. Chidambaram, R. Irwin, P. Jones, J. Weijtmans, E. Koontz, Y. Wang, S. Tang, R. Wise

Electrochemical Society
2 Conference Proceedings 12 Performance enhancements for 50-nm PMOS by angled pre-amorphization implants and fluorine implants

Chidambaram, P.R., Ekbote, S., Chakravarthi, S., Chatterjee, A., Machala, C.F., Johnson, S.F.

Electrochemical Society
8 Conference Proceedings 64 Si:C Epitaxial Wafer for Improved Sub-100nm CMOS Transistor Performance

Standley, R., Mansoori, M., Miles, D., Chakravarthi, S., Seacrist, M., Wise, R., Torack, T., Ries, M.

Electrochemical Society
3 Conference Proceedings Modeling Of Diffusion And Activation Of Low Energy Arsenic Implants In Silicon

Chakravarthi, Srinivasan, Chidambaram, P.R., Machala, Charles, Jain, Amitabh, Zhang, Xin

Materials Research Society
9 Conference Proceedings Status of infrared detectors (Invited Paper)

Norton,P.R.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Impurity Locking of Dislocations in Silicon （Invited Paper）

Giannattasio, A., Murphy, ID., Senkader, S., Falster, R.J., Wilshaw, P.R.

Electrochemical Society
10 Conference Proceedings Optical design for the 5-to 28-μm NGST MIRI spectroscopy channel(MIRI-S)(Invited Paper)

Wells, M., Pel, J.-W., Schoenmaker, A., Wright, G.S., Hastings, P.R., Content, R., Peacocke, T.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Dislocation and strain engineering for SiGe buffer layers on Si (invited paper)

Sakai, A., Mochizuki, S., Taoka, N., Nakatsuka,　O., Takeda, S., Kimura, S., Ogawa, M., Zaima, S.

Electrochemical Society
11 Conference Proceedings Current status of COAST (Invited Paper)

Baldwin,J.E., Boysen,R.C., Haniff,C.A., Lawson,P.R., Mackay,C.D., Rogers,J., St-Jacques,D., Warner,P.J., Wilson,D.M.A., …

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

R. Loo, P. Verheyen, R. Rooyackers, C. Walczyk, F. Leys

Electrochemical Society
12 Conference Proceedings Investigation and Modeling of Fluorine Co-Implantation Effects on Dopant Redistribution

Diebel, M., Chakravarthi, S., Dunham, S. T., Machala, C. F., Ekbote, S., Jain, A.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12