35 New Developments in Schottky Source/Drain High-k/Metal Gate CMOS Transistors

35 New Developments in Schottky Source/Drain High-k/Metal Gate CMOS Transistors

Author(s):

Li, M.-F.

Kwong, D.L. (Invited Paper)

2 more

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-05

Pub. Year:

2005

Page(from):

301

Page(to):

310

Pages:

10

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774635 [1566774632]

Language:

English

Call no.:

E23400/200505

Type:

Conference Proceedings

Details

TDL ID:	ZA00015388
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	2005 ; 207th
Conf. info. (Venue):	Quebec City, QC, Canada
Conf. info. (Date):	2005.05.16-2005.05.18

Similar Items:

1 Conference Proceedings Schottky Source/Drain Transistor on Thin SiGe on Insulator Integrated with HfO2/TaN Gate Stack Fei Gao, S. J. Lee, Rui Li, S. Balakumar, Chih-Hang Tung, Dong-Zhi Chi, Dim-Lee Kwong Materials Research Society	7 Conference Proceedings Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications Kim,B.Y., Wristers,D., Kwong,D.L. SPIE-The International Society for Optical Engineering
2 Conference Proceedings New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide Cho, B.J., Chen, G., Loh, W.Y., Kwong, D.L. Electrochemical Society	8 Conference Proceedings Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. … Electrochemical Society
3 Conference Proceedings New Insights in Hf Based High-k Gate Deiclectrics in MOSFETs M. Li, C. Zhu, C. Shen, X. Yu, Y. Feng, Y. Yeo, A. Chin, D. Kwong, S. H. Wang, A. Du, G. Samudra Electrochemical Society	9 Conference Proceedings Degradation of thin SiO2 sidewall spacers during the selective epitaxial growth for the fabrication of raised source/drain MOSFETs Unnikrishnan,S., Kim,B.Y., Wang,C.-L., Wu,Y.-K., Kwong,D.-L., Tasch,A.F. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Process optimization of dual-gate CMOS Liu,I.M., Chen,Y.Y., Connor,C., Joshi,A.B., Kwong,D.L. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Challenges and Opportunities in High-K Gate Dielectric Technology Niwa, M., Harada, Y., Yamamoto, K., Hayashi, S., Mitsuhashi, R., Eriguchi, K., Kubota, M., Hoshino, Y., Kido, Y, Kwong, … Electrochemical Society
5 Conference Proceedings CMOS Integration Issues with High-K/Metal Gate Stack D. Kwong Electrochemical Society	11 Conference Proceedings A NOVEL SILICIDED SHALLOW JUNCTION TECHNOLOGY FOR CMOS VLSI Kwong, D.L., Ku, Y.H., Lee, S.K., Alvi, N.S., Chu, P., Zhou, Y., White, J.M. Materials Research Society
6 Conference Proceedings High Performance P-Channel Schottky Barrier Thin-Film Transistors with PtSi Source/Drain Lee, M.-H., Huang, T.-Y., Yeh, K.-L., Lin, H.-C. Electrochemical Society	12 Conference Proceedings Performance Impact of silicided Source/Drain/Gate on Deep Submicron CMOS Circuits L.K. Wang, W.H. Chang, T. Lii Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12