Gain comparison for periodically delta-doped p-Ge structures with vertical and in-plane transport

Gain comparison for periodically delta-doped p-Ge structures with vertical and in-plane transport

Author(s):

Dolguikh, M. V. ( Univ. of Central Florida (USA) )
Muravjov, A. V. ( Univ. of Central Florida (USA) )
Peale, R. E. ( Univ. of Central Florida (USA) )

Publication title:

Terahertz for military and security applications III : 28-29 March 2005, Orlando, Florida, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5790

Pub. Year:

2005

Page(from):

161

Page(to):

166

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457752 [0819457752]

Language:

English

Call no.:

P63600/5790

Type:

Conference Proceedings

Details

TDL ID:	ZA00015021
Series ID:	PA00000029
Conf. info. (Name):	Defense, Security, and Sensing : Terahertz for Military and Security Applications
Conf. info. (Number):	2005 : 3rd
Conf. info. (Venue):	Orlando, FL, USA
Conf. info. (Date):	2005.03.28-2005.03.29

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