Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors

Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors

Author(s):

Han, J. ( Kangnam Univ. (South Korea) )
Yoo, S. ( Yukyung Telecom Co,. Ltd. (South Korea) )

Publication title:

Fundamental problems of optoelectronics and microelectronics II : 13-16 September, 2004, Khabarovsk, Russia

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5851

Pub. Year:

2005

Page(from):

357

Page(to):

363

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458483 [0819458481]

Language:

English

Call no.:

P63600/5851

Type:

Conference Proceedings

Details

TDL ID:	ZA00015085
Series ID:	PA00000029
Conf. info. (Name):	Fundamental problems of optoelectronics and microelectronics
Conf. info. (Number):	2004 : 2nd
Conf. info. (Venue):	Khabarovsk, Russia
Conf. info. (Date):	2004.09.13-2004.09.16

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