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High frequency noise of SOI MOSFETs: performances and limitations (Invited Paper)

Author(s):
  • Danneville, F. ( Institut d'Electronique, de Microelectronique et de Nanotechnologie (France) )
  • Pailloncy, G. ( Institut d'Electronique, de Microelectronique et de Nanotechnologie (France) )
  • Siligaris, A. ( Institut d'Electronique, de Microelectronique et de Nanotechnologie (France) )
  • Iniguez, B. ( Univ. Rovira i Virgili (Spain) )
  • Dambrine, G. ( Institut d'Electronique, de Microelectronique et de Nanotechnologie (France) )
Publication title:
Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5844
Pub. Year:
2005
Page(from):
185
Page(to):
199
Pages:
15
Pub. info.:
Bellingham, Washington: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819458391 [0819458392]
Language:
English
Call no.:
P63600/5844
Type:
Conference Proceedings

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