Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation

Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation

Author(s):

Kaniewski, J. ( Institute of Electron Technology (Poland) )
Muszalski, J. ( Institute of Electron Technology (Poland) )
Pawluczyk, J. ( Vigo System (Poland) )
Piotrowski, J. ( Military Institute of Armament Technology (Poland) )

Publication title:

Infrared technology and applications XXXI : 28 March-1 April 2005, Orlando, Florida, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5783

Pub. Year:

2005

Page(from):

47

Page(to):

56

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457684 [081945768X]

Language:

English

Call no.:

P63600/5783-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00015013
Series ID:	PA00000029
Conf. info. (Name):	Defense, Security, and Sensing : Infrared Technology and Applications
Conf. info. (Number):	31st
Conf. info. (Venue):	Orlando, FL, USA
Conf. info. (Date):	2005.03.28-2005.04.01

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