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193nm dual layer organic BARCS for high NA immersion lithography

Author(s):
Montgomery, P. K. ( Freescale Semiconductor Technology Solutions Organization (USA) )
Peters, R. ( Freescale Semiconductor Technology Solutions Organization (USA) )
Garza, C. ( Freescale Semiconductor, Inc. (USA) )
Cobb, J. ( Freescale Semiconductor Technology Solutions Organization (USA) )
Darlington, B. ( Freescale Semiconductor Technology Solutions Organization (USA) )
Parker, C. ( Freescale Semiconductor Technology Solutions Organization (USA) )
Filipiak, S. ( Freescale Semiconductor, Inc. (USA) )
Babbitt, D. ( Freescale Semiconductor, Inc. (USA) )
3 more
Publication title:
Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5753(1)
Pub. Year:
2005
Pt.:
1
Page(from):
417
Page(to):
435
Pages:
19
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457332 [0819457337]
Language:
English
Call no.:
P63600/5753-1
Type:
Conference Proceedings

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