Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure

Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure

Author(s):

Kohler, T. ( Rohm and Haas Electronic Materials (USA) )

Brainard, R. L. ( Rohm and Haas Electronic Materials (USA) )

Naulleau, P. P. ( Lawrence Berkeley National Lab. (USA) )

Steenwinckel, D. Van ( Lawrence Berkeley National Lab. (USA) )

Lammers, J. H. ( Philips Research Leuven (Belgium) )

Goldberg, K. A. ( Lawrence Berkeley National Lab. (USA) )

Mackevich, J. F. ( Rohm and Haas Electronic Materials (USA) )

Trefonas, P. ( Rohm and Haas Electronic Materials (USA) )

3 more

Publication title:

Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5753(1)

Pub. Year:

2005

Pt.:

1

Page(from):

140

Page(to):

148

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457332 [0819457337]

Language:

English

Call no.:

P63600/5753-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00014977
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2005 : 22th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.02.28-2005.03.02

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