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Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Author(s):
Chu, J.-T. ( National Chiao Tung Univ. (Taiwan) )
Liang, W, -D. ( National Chiao Tung Univ. (Taiwan) )
Kao, C.-C. ( National Chiao Tung Univ. (Taiwan) )
Huang, H.-W. ( National Chiao Tung Univ. (Taiwan) )
Chu, C.-F. ( National Chiao Tung Univ. (Taiwan) )
Kuo, H.-C. ( National Chiao Tung Univ. (Taiwan) )
Wang, S.C. ( National Chiao Tung Univ. (Taiwan) )
2 more
Publication title:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5739
Pub. Year:
2005
Page(from):
233
Page(to):
128
Pages:
-104
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457134 [0819457132]
Language:
English
Call no.:
P63600/5739
Type:
Conference Proceedings

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