980-nm small-aperture tapered laser (1 W CW, M2-3) and tapered arrays (>3W CW): comparison between GalnAs/(Al)GaAs quantum dot and quantum well structures

980-nm small-aperture tapered laser (1 W CW, M2-3) and tapered arrays (>3W CW): comparison between GalnAs/(Al)GaAs quantum dot and quantum well structures

Author(s):

Michei, N. ( Thales Research and Technology (France) and Alcatel-Thales lll-V Lab. (France) )

Calligaro, M. ( Thales Research and Technology (France) and Alcatel-Thales lll-V Lab. (France) )

Krakowski, M. ( Thales Research and Technology (France) and Alcatel-Thales lll-V Lab. (France) )

Deubert, S. ( Univ. Wurzburg (Germany) )

Reithmaier, J.-P. ( Univ. Wurzburg (Germany) )

Forchel, A. ( Univ. Wurzburg (Germany) )

1 more

Publication title:

Novel In-Plane Semiconductor Lasers IV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5738

Pub. Year:

2005

Page(from):

355

Page(to):

364

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457127 [0819457124]

Language:

English

Call no.:

P63600/5738

Type:

Conference Proceedings

Details

TDL ID:	ZA00014954
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Novel In-Plane Semiconductor Lasers
Conf. info. (Number):	2005 : 4th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.01.24-2005.01.27

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