Adaptive control of ion beams produced by ultrafast laser ablation of silicon (Invited Paper)

Adaptive control of ion beams produced by ultrafast laser ablation of silicon (Invited Paper)

Author(s):

Stoian, R. ( Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany) and Lab. TSI, CNRS, Univ. Jean Monnet (France) )

Bulgakova, N.M. ( Institute of Thermophysics (Russia) )

Mermillod-Blondin, A. ( Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany) and Lab. TSI, CNRS, Univ. Jean Monnet (France) )

Rosenfeld, A. ( Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany) )

Spyridaki, M. ( Foundation for Research and Technology-Hellas (Greece) )

Koudoumas, E. ( Foundation for Research and Technology-Hellas (Greece) )

Fotakis, C. ( Foundation for Research and Technology-Hellas (Greece) )

Hertel, I.V. ( Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie (Germany) )

3 more

Publication title:

Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5725

Pub. Year:

2005

Page(from):

329

Page(to):

343

Pages:

15

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819456991 [0819456993]

Language:

English

Call no.:

P63600/5725

Type:

Conference Proceedings

Details

TDL ID:	ZA00014942
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Ultrafast Phenomena in Semiconductors and Nanostructure Materials
Conf. info. (Number):	2005 : 9th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.01.24-2005.01.27

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