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Excitation fluence dependence of THZ radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field (Invited Paper)

Author(s):
  • Takahashi, H. ( Univ. of Electro-Communications (Japan) )
  • Quema, A. ( Institute for Molecular Science (Japan) )
  • Yoshioka, R. ( Institute for Molecular Science (Japan) )
  • Ono, S. ( Institute for Molecular Science (Japan) )
  • Sarukura, N. ( Institute for Molecular Science (Japan) )
Publication title:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5725
Pub. Year:
2005
Page(from):
25
Page(to):
33
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819456991 [0819456993]
Language:
English
Call no.:
P63600/5725
Type:
Conference Proceedings

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