Improvement of carrier confinement in blue light emitting diode with InGaN/GaN multiquantum barriers

Improvement of carrier confinement in blue light emitting diode with InGaN/GaN multiquantum barriers

Author(s):

Lin, R.-M. ( Chang Gung Univ. (Taiwan) )
Wang, J.-C. ( Chang Gung Univ. (Taiwan) )
Lin, C.-H. ( Chang Gung Univ. (Taiwan) )
Nee, T.-E. ( Chang Gung Univ. (Taiwan) )

Publication title:

Physics and Simulation of Optoelectronic Devices XIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5722

Pub. Year:

2005

Page(from):

439

Page(to):

445

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819456960 [0819456969]

Language:

English

Call no.:

P63600/5722

Type:

Conference Proceedings

Details

TDL ID:	ZA00014939
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	2005 : 13th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.01.24-2005.01.27

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