The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

Author(s):

Thomson, J.D. ( Cardiff Univ. (United Kingdom) )

Pope, I.A. ( Cardiff Univ. (United Kingdom) )

Smowton, P.M. ( Cardiff Univ. (United Kingdom) )

Blood, P. ( Cardiff Univ. (United Kingdom) )

Lynch, R.J. ( Univ. of Sheffield (United Kingdom) )

Hill, G. ( Univ. of Sheffield (United Kingdom) )

Wang, T. ( Univ. of Sheffield (United Kingdom) )

Parbrook, P.J. ( Univ. of Sheffield (United Kingdom) )

3 more

Publication title:

Physics and Simulation of Optoelectronic Devices XIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5722

Pub. Year:

2005

Page(from):

425

Page(to):

430

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819456960 [0819456969]

Language:

English

Call no.:

P63600/5722

Type:

Conference Proceedings

Details

TDL ID:	ZA00014939
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	2005 : 13th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.01.24-2005.01.27

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