Temperature dependent output characteristics of p-doped 1.1 and 1.3 um quantum dot lasers

Temperature dependent output characteristics of p-doped 1.1 and 1.3 um quantum dot lasers

Author(s):

Mi, Z. ( Univ. of Michigan (USA) )

Fathpour, S. ( Univ. of Michigan (USA) )

Bhattacharya, P. ( Univ. of Michigan (USA) )

Kovsh, A.R. ( NSC-Nanosemiconductor GmbH (Germany) )

Mikhrin, S.S. ( NSC-Nanosemiconductor GmbH (Germany) )

Krestnikov, I.L. ( NSC-Nanosemiconductor GmbH (Germany) )

Kozhukhov, A.V. ( NSC-Nanosemiconductor GmbH (Germany) )

Ledentsov, N.N. ( NSC-Nanosemiconductor GmbH (Germany) )

3 more

Publication title:

Physics and Simulation of Optoelectronic Devices XIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5722

Pub. Year:

2005

Page(from):

60

Page(to):

71

Pages:

12

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819456960 [0819456969]

Language:

English

Call no.:

P63600/5722

Type:

Conference Proceedings

Details

TDL ID:	ZA00014939
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	2005 : 13th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.01.24-2005.01.27

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