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A new ZEP520/P(MMA-MAA)/ZEP520 trilayer process for T-shaped gate using synchrotron-based proximity x-ray lithography

Author(s):
Xie, C. ( Institute of Microelectronics, CAS (China) )
Chen, D. ( Institute of Microelectronics, CAS (China) )
Niu, J. ( Institute of Microelectronics, CAS (China) )
Liu, M. ( Institute of Microelectronics, CAS (China) )
Ye, T. ( Institute of Microelectronics, CAS (China) )
Yi, F. ( Institute of High Energy Physics, CAS (China) )
Peng, L. ( Institute of High Energy Physics, CAS (China) )
2 more
Publication title:
Advanced microlithography technologies : 8-10 November, 2004, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5645
Pub. Year:
2004
Page(from):
328
Page(to):
333
Pages:
6
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819456007 [0819456004]
Language:
English
Call no.:
P63600/5645
Type:
Conference Proceedings

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