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Analysis of nanometer-isolated trench diffract aerial image of both conventional and second-generation synchrotron-based proximity x-ray lithography

Author(s):
  • Xie, C. ( Institute of Microelectronics, CAS (China) )
  • Chen, D. ( Institute of Microelectronics, CAS (China) )
  • Liu, M. ( Institute of Microelectronics, CAS (China) )
  • Ye, T. ( Institute of Microelectronics, CAS (China) )
  • Yi, F. ( Institute of High Energy Physics, CAS (China) )
Publication title:
Advanced microlithography technologies : 8-10 November, 2004, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5645
Pub. Year:
2004
Page(from):
299
Page(to):
306
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819456007 [0819456004]
Language:
English
Call no.:
P63600/5645
Type:
Conference Proceedings

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