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High-power Al-free active region InGaAsP/GaAs(λ=852 nm) laser diodes for atomic clocks and interferometry applications

Author(s):
Vermersch, F. -J. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Lecomte, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Calligaro, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Parillaud, O. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Bansropun, S. ( Thales Research and Technology (France) )
Garcia, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
Krakowski, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) )
2 more
Publication title:
Solid state laser technologies and femtosecond phenomena : 25-27 October, 2004, London, United Kingdom
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5620
Pub. Year:
2004
Page(from):
170
Page(to):
178
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819455734 [0819455733]
Language:
English
Call no.:
P63600/5620
Type:
Conference Proceedings

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