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Using low-frequency noise characterization of AIGaN/GaN HEMT as a tool for technology assessment and failure prediction

Author(s):
Tartarin, J.-G. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
Soubercaze-Pun, G. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
Rennane, A. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
Bary, L. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
Plana, R. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
De Jaeger, J. C. ( Institut d' Electronique de Microelectronique et de Nanotechnologie (France) )
Germain, M. ( IMEC (France) )
Delage, S. ( THALES-TRT/TIGER (France) )
Graffeuil, J. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
4 more
Publication title:
Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5470
Pub. Year:
2004
Page(from):
296
Page(to):
306
Pages:
11
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453969 [081945396X]
Language:
English
Call no.:
P63600/5470
Type:
Conference Proceedings

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