Low-frequency noise behavior in GaN HEMTs on silicon substrate

Low-frequency noise behavior in GaN HEMTs on silicon substrate

Author(s):

Bary, L. ( LAAS-CNRS (France) )

Angeli, E. ( LAAS-CNRS (France) )

Rennane, A. ( LAAS-CNRS (France) )

Sovbercaze-Pun, G. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )

Tartarin, J.-G. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )

Minko, A. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )

Hoel, V. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )

Cordier, Y. ( CRHEA-CNRS (France) )

Dua, C. ( THALES-TRT/TIGER (France) )

Plana, R. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )

Graffeuil, J. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )

6 more

Publication title:

Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5470

Pub. Year:

2004

Page(from):

286

Page(to):

295

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453969 [081945396X]

Language:

English

Call no.:

P63600/5470

Type:

Conference Proceedings

Details

TDL ID:	ZA00014661
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Fluctuations and Noise : Noise In Devices and Circuits
Conf. info. (Number):	2004 : 2nd
Conf. info. (Venue):	Maspalomas, Gran Canaria, Spain
Conf. info. (Date):	2004.05.26-2004.05.28

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