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Influence of the emitter-base junction depth on the low-frequency noise of Si/SiGeC heterojunction bipolar transistors

Author(s):
Benoit, P. ( STMicroelectronics (France) and Univ. Montpellier II (France) )
Chay, C. ( Univ. Montpellier II (France) )
Delseny, C. ( Univ. Montpellier II (France) )
Pascal, F. ( Univ. Montpellier II (France) )
Llinares, P. ( STMicroelectronics (France) )
Vildeuil, J.-C. ( STMicroelectronics (France) )
Baudry, H. ( STMicroelectronics (France) )
2 more
Publication title:
Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5470
Pub. Year:
2004
Page(from):
242
Page(to):
250
Pages:
9
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453969 [081945396X]
Language:
English
Call no.:
P63600/5470
Type:
Conference Proceedings

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