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Microwave noise in III-V- and SiGe-based HBTs: comparison, trends, and numbers (Invited Paper)

Author(s):
  • Sakalas, P. ( Technische Univ. Dresden (Germany) and Semiconductor Physics Institute (Lithuania) )
  • Schroter, M. ( Technische Univ. Dresden (Germany); P. Zampardi, Skyworks Inc. (USA) )
  • Racanelli, M. ( Jazz Semiconductor (USA) )
Publication title:
Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5470
Pub. Year:
2004
Page(from):
151
Page(to):
163
Pages:
13
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453969 [081945396X]
Language:
English
Call no.:
P63600/5470
Type:
Conference Proceedings

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