Line-edge roughness characterized by polymer aggregates in photoresists

Line-edge roughness characterized by polymer aggregates in photoresists

Author(s):

Yamaguchi, T. ( NTT Basic Research Labs. (Japan) )
Namatsu, H. ( NTT Basic Research Labs. (Japan) )
Nagase, M. ( NTT Basic Research Labs. (Japan) )
Kurihara, K. ( NTT Basic Research Labs. (Japan) )
Kawai, Y. ( NTT System Electronics Labs. (Japan) )

Publication title:

Microlithography 1999 : advances in resist technology and processing XVI : 15-17 March 1999, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3678

Pub. Year:

1999

Page(from):

617

Page(to):

624

Pages:

8

Pub. info.:

Bellingham, Wash., USA: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819431523 [0819431524]

Language:

English

Call no.:

P63600/3678-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00014620
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Microlithography
Conf. info. (Number):	1999 : 16th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1999.03.15-1999.03.17

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