1.6 μm Emission From InAs Quantum Dots Grown on a GaAs Substrate Using an AlGaAsSb Metamorphic Buffer

1.6 μm Emission From InAs Quantum Dots Grown on a GaAs Substrate Using an AlGaAsSb Metamorphic Buffer

Author(s):

Balakrishnan, G.

Publication title:

Quantum confined semiconductor nanostructures : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

737

Pub. Year:

2003

Page(from):

19

Page(to):

48

Pages:

36

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996748 [1558996745]

Language:

English

Call no.:

M23500/737

Type:

Conference Proceedings

Details

TDL ID:	ZA00014608
Series ID:	PA00000011
Conf. info. (Name):	Symposium on quantum confined semiconductor nanostructures
Conf. info. (Number):	2002
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2002.12.02-2002.12.05

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