Dislocation Reduction With Quantum Dots In Gan Grown On Sapphire Substrates By Molecular Beam Epitaxy

Dislocation Reduction With Quantum Dots In Gan Grown On Sapphire Substrates By Molecular Beam Epitaxy

Author(s):

Smith, David J.

Huang, Daming

Reshchikov, Michael A.

Publication title:

Materials and devices for optoelectronics and microphotonics : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

722

Pub. Year:

2002

Page(from):

33

Page(to):

38

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996588 [1558996583]

Language:

English

Call no.:

M23500/722

Type:

Conference Proceedings

Details

TDL ID:	ZA00014595
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials and devices for optoelectronics and microphotonics
Conf. info. (Number):	2002
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.01-2002.04.05

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