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Growth of GaN on Porous SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy

Author(s):
Publication title:
Materials and devices for optoelectronics and microphotonics : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
722
Pub. Year:
2002
Page(from):
21
Page(to):
26
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996588 [1558996583]
Language:
English
Call no.:
M23500/722
Type:
Conference Proceedings

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