Deep Level Study In Epitaxial 4H-SiC Grown On Substrates Inclined Toward <1Bar100>

Deep Level Study In Epitaxial 4H-SiC Grown On Substrates Inclined Toward <1Bar100>

Author(s):

Publication title:

Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

719

Pub. Year:

2002

Page(from):

457

Page(to):

462

Pages:

6

Pub. info.:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781558996656 [1558996659]

Language:

English

Call no.:

M23500/719

Type:

Conference Proceedings

Details

TDL ID:	ZA00014592
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect and impurity engineered semiconductors and devices
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.01-2002.04.05

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