The Strain Relaxation And Dislocation Density Of Sige Films In Micron Size Window With Different Mask Materials Grown By Mbe

The Strain Relaxation And Dislocation Density Of Sige Films In Micron Size Window With Different Mask Materials Grown By Mbe

Author(s):

Zhang, Xiang-jiu

Publication title:

Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

719

Pub. Year:

2002

Page(from):

365

Page(to):

370

Pages:

6

Pub. info.:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781558996656 [1558996659]

Language:

English

Call no.:

M23500/719

Type:

Conference Proceedings

Details

TDL ID:	ZA00014592
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect and impurity engineered semiconductors and devices
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.01-2002.04.05

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