Raman Scattering Spectra In Be-Implanted Gan Epilayers

Raman Scattering Spectra In Be-Implanted Gan Epilayers

Author(s):

Publication title:

Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

719

Pub. Year:

2002

Page(from):

337

Page(to):

340

Pages:

4

Pub. info.:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781558996656 [1558996659]

Language:

English

Call no.:

M23500/719

Type:

Conference Proceedings

Details

TDL ID:	ZA00014592
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect and impurity engineered semiconductors and devices
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.01-2002.04.05

Similar Items:

1 Conference Proceedings Growth of Crack-Free GaN on AlN Quantum Dots on Si (111)Substrates by MOCVD Sun, W.H., Chen, J.L., Wang, L.S., Chua, S.J. Materials Research Society	7 Conference Proceedings Influence of Substrate Orientation on Photoluminescence in InGaN/GaN Multiple Quantum Wells Chen, P., Chua, S.J., Wang, W. Materials Research Society
2 Conference Proceedings Comparative Investigation Of Photoluminescence Of Si-And In-Doped Gan/Algan Multiquantum Wells Sun, W.H., Wang, L.S., Chua, S.J. Materials Research Society	8 Conference Proceedings GaN Room-Temperature Exciton Spectra by Photovoltaic Measurement Liu, W., Li, M. F., Chua, S. J., Zhang, Y. H., Uchida, K. MRS - Materials Research Society
3 Conference Proceedings Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition Feng,Z.C., Wang,W., Liu,W., Chua,S.J., Evans,G.A., Kuball,M., Williams,K.P.J., Pitt,G.D. SPIE - The International Society for Optical Engineering	9 Conference Proceedings Phase transformation and Raman spectra in BaTiO3 nanocrystals Yu, Jian, Meng, X.J., Sun, J.L., Wang, G.S., Chu, J.H. Materials Research Society
4 Conference Proceedings Identification of deep levels in π-GaN epilayers Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Microscopic Probing of Raman Scattering and Photoluminescence on C-AI Ion Co-Implanted 6H-SiC Feng, Z. C., Chua, S. J., Shen, Z. X., Tone, K., Zhao, J. H. Trans Tech Publications
5 Conference Proceedings Activation of beryllium-implanted GaN by two-step annealing Sun, Y., Tan, L. S., Chua, S. J., Prakash, S. MRS-Materials Research Society	11 Conference Proceedings Micro-Raman Spectroscopic Investigation of NiSi Films Formed on BF2+-,B+-and Non=Implanted (100) Si Substrates Donthu, S.K., Chi, D.Z., Wong, A.S.W., Chua, S.J., Tripathy, S. Materials Research Society
6 Conference Proceedings Effect of Ge-Rich Si1-zGez Segregation on the Morphological Stability of NiSi1-uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer Yao, H.B., Chi, D.Z., Tripathy, S., Chow, S.Y., Wang, W.D., Chua, S.J., Sun, H.P., Pan, X.Q. Materials Research Society	12 Conference Proceedings GaN Epilayers and AlGaN/GaN Multiple Quantum Wells Grown on Freestanding [1100] Oriented GaN Substrates Chen, C.Q., Gaevski, M.E., Sun, W.H., Kuokstis, E., Yang, J.W., Simin, G., Khan, M.A., Maruska, H.P., Hill, D.W., Chou, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12