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Dose Rate and Temperature Dependence of Ion-Beam-Induced Defect Evolution in Si and SiC

Author(s):
Publication title:
Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
719
Pub. Year:
2002
Page(from):
311
Page(to):
318
Pages:
8
Pub. info.:
Warrendale, Pa: Materials Research Society
ISSN:
02729172
ISBN:
9781558996656 [1558996659]
Language:
English
Call no.:
M23500/719
Type:
Conference Proceedings

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