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Radiation hardness of AlGaN/GaN based HEMTs

Author(s):
Vitusevich, S.A.
Klein, N.
Belyaev, A.E.
Danylyuk, S.V.
Petrychuk, M.V.
Konakova, R.V.
Kurakin, A.M.
Rengevich, A.E.
Avksentyev, A. Yu.
Danilchenko, B.A.
Tilak, V.
Smart, J.
Vertiatchikh, A.
Eastman, L.F.
9 more
Publication title:
Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
719
Pub. Year:
2002
Page(from):
133
Page(to):
138
Pages:
6
Pub. info.:
Warrendale, Pa: Materials Research Society
ISSN:
02729172
ISBN:
9781558996656 [1558996659]
Language:
English
Call no.:
M23500/719
Type:
Conference Proceedings

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