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Damage And Dopant Distributions Produced By Ultra Shallow B And As Implants Into Si At Different Temperatures Characterized By Medium Energy Ion Scattering

Author(s):
Berg, J.A. van den
Armour, D.G.
Zhang, S.
Whelan, S.
Werner, M.
Collart, E.H.J.
Goldberg, R.D.
Bailey, P.
Noakes, T.C.Q.
4 more
Publication title:
Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
717
Pub. Year:
2002
Page(from):
303
Page(to):
308
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996533 [1558996532]
Language:
English
Call no.:
M23500/717
Type:
Conference Proceedings

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