Modeling Dislocation Loop Nucleation And Evolution In Germanium, Arsenic And Boron Implanted Silicon

Modeling Dislocation Loop Nucleation And Evolution In Germanium, Arsenic And Boron Implanted Silicon

Author(s):

Publication title:

Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

717

Pub. Year:

2002

Page(from):

249

Page(to):

254

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996533 [1558996532]

Language:

English

Call no.:

M23500/717

Type:

Conference Proceedings

Details

TDL ID:	ZA00014590
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon front-end junction formation technologies
Conf. info. (Number):	2002
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.02-2002.04.04

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