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A Model For Boron Ted In Silicon: Full Couplings Of Dopant With Free And Clustered Interstitials

Author(s):
Publication title:
Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
717
Pub. Year:
2002
Page(from):
207
Page(to):
212
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996533 [1558996532]
Language:
English
Call no.:
M23500/717
Type:
Conference Proceedings

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