Degradation Study Of Ultra-Thin JVD Silicon Nitride MNSFETs

Degradation Study Of Ultra-Thin JVD Silicon Nitride MNSFETs

Author(s):

Publication title:

Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

716

Pub. Year:

2002

Page(from):

209

Page(to):

214

Pages:

6

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996526 [1558996524]

Language:

English

Call no.:

M23500/716

Type:

Conference Proceedings

Details

TDL ID:	ZA00014589
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon materials - processing characterization and reliability
Conf. info. (Number):	2002
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.01-2002.04.05

Similar Items:

1 Conference Proceedings Polarity Dependence Of Degradation In Ultra Thin Oxide And Jvd Nitride Gate Dielectrics Mutha, Yatin, ManjulaRani, K.N., Lal, Rakesh, Rao, V. Ramgopal Materials Research Society	7 Conference Proceedings HEATING, LASER IRRADIATION AND PASSIVATION STUDY ON THE LIGHT-EMITTING POROUS SILICON Chen, H.C., Wang, W., Manjularani, K.N., Snyder, L.C., Zheng, X.L. Materials Research Society
2 Conference Proceedings High Field Stressing Effects in JVD Nitride Capacitors ManjulaRani, K.N., Ramgopal Rao, V., Vasi, J. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Polycrystalline Silicon Thin Film Transistors Bhat,K.N., Rao,P.R.S., Anil Kumar Panariya Narosa Publishing House
3 Conference Proceedings ULSI MOS Transistors with Jet Vapour Deposited(JVD)Silicon Nitride for the Gate Insulator Mahapatra,S., Manjularani,K.N., Rao,V.Ramgopal, Vasi,J. SPIE - The International Society for Optical Engineering	9 Conference Proceedings Optimization and Realization of Sub 100nm Channel Length Lateral Asymmetric Channel P-MOSFETS Hemkar,M., Vasi,J., Rao,V.Ramgopal, Cheng,B., Woo,J.C.S. SPIE - The International Society for Optical Engineering
4 Conference Proceedings Characterization and Simulation of Lateral Asymmetric Channel Silicon-on-Insulator MOSFETs Najeeb-ud-Din, Ramgopal Rao, V., Vasi, J. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Novel Diffusion Barrier with Ultra-Thin Silicon Nitride Cap Layer Lu, J. P., Hsu, W. Y., Hong, Q. Z., Dixit, G. A., Cordasco, V. T., Zielinski, E. M., Luttmer, J. D., Havemann, R. H., … MRS - Materials Research Society
5 Conference Proceedings Suppression Of Parasitic BJT Action In Single Pocket Thin Film Deep Sub-Micron Soi Mosfets Din, Najeeb-ud, Kumar, Aatish, Dunga, Mohan V., Rao, V. Ramgopal, Vasi, J. Materials Research Society	11 Conference Proceedings Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitors by Hydrogen Etching of the Substrate Waghmare, Parag C., Patil, Samadhan B., Dusane, Rajiv O., Rao, V. Ramgopal Materials Research Society
6 Conference Proceedings Reliability Issues of Ultra Thin Silicon Nitride (a-SiN:H) by Hot Wire CVD for Deep Sub-Micron CMOS Technologies Waghmare, P.C., Patil, S.B., Kumbhar, A., Dusane, R.O., Rao, Ramgopal SPIE-The International Society for Optical Engineering	12 Conference Proceedings Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO2 Surfaces D'Emic, C.P., Gusev, E.P., Chan, K.K., Zabel, T., Copel, M., Murphy, R., Kozolowski, P., Newbury, J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12