Protocrystalline Si:H p-Type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

Protocrystalline Si:H p-Type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

Author(s):

Koval, R.J.

Publication title:

Amorphous and heterogeneous silicon-based films - 2002 : symposium held April 2-5, 2002, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

715

Pub. Year:

2002

Page(from):

565

Page(to):

570

Pages:

6

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996519 [1558996516]

Language:

English

Call no.:

M23500/715

Type:

Conference Proceedings

Details

TDL ID:	ZA00014588
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous and heterogeneous silicon-based films
Conf. info. (Number):	2002
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2002.04.02-2002.04.05

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