Blank Cover Image

Improved Mobilities and Resistivities in Modulation-Doped P-type AlGaN/GaN Superlattices

Author(s):
Publication title:
GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
693
Pub. Year:
2002
Page(from):
823
Page(to):
830
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996298 [155899629X]
Language:
English
Call no.:
M23500/693
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Polarization Effects in AlxGa1-xN / GaN Superlattices

Waldron, Erik L., Schubert, E. Fred, Graff, John W., Osinsky, Andrei, Murphy, Michael J., Schaff, William F.

Materials Research Society
7 Conference Proceedings Improved Oxide Passivation of AlGaN/GaN High Electron Mobility Transistors

T. Anderson, B. P. Gila, M. Hiad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. …

Electrochemical Society
2 Conference Proceedings Optimization of p-type AlGaN/GaN and GaN/InGaN Superlattice Design for Enhanced Vertical Transport

Kauser, M. Z., Osinsky, A., Dong, J. W., Hertog, B., Dabiran, A., Chow, P. P.

Materials Research Society
8 Conference Proceedings Growth and characterization of AlGaN/GaN superlattices

Guo, W.P., Hu, H., Zhou, X.Y., Wu, T., Sun, C.Z., Luo, Y.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor

Sheng-Chun Hung, Byung Hwan Chu, Chih-Yang Chang, Chien Fong Lo, Ke-Hung Chen, S.J. Pearton, Amir Dabiran, P.P. Chow, …

Materials Research Society
9 Conference Proceedings Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Walukiewicz, W., Hsu, L., Redwing, J. M.

MRS - Materials Research Society
4 Conference Proceedings Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

Sood, A. K., Egerton, E. J., Puri, Y. R., Clarke, F. W. Jr., Hwang, J. C. M., Dabiran, A., Chow, P., Anderson, T., …

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Efficient acceptor activation in AlxGa1-xN/GaN doped superlattices

Goepfert, I. D., Schubert, E. F., Osinsky, A., Norris, P. E.

MRS-Materials Research Society
5 Conference Proceedings Design and Development of MBE Grown AlGaN/GaN REMT Devices on SiC Substrates for RF Applications

Sood, Ashok K., Singh, Rajwinder, Puri, yash R., Clarke, Frederick W., Dabiran, Amir, Chow, Peter, Deng, Jie, Hwang, …

Materials Research Society
11 Conference Proceedings Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications

A. K. Sood, Y. R. Puri, F. W. Clarke, J. Deng, J. C. M. Hwang, S. K. Brierley, M. A. Khan, A. Dabiran, P. Chow, O. A. …

SPIE - The International Society of Optical Engineering
6 Conference Proceedings Low-Resistance Electrical Contacts to p-Type GaN by Using InxGa1-xN Cap Layers

Gessmann, Th., Li, Y.-L., Graff, J.W., Schubert, E.F., Sheu, J.K.

Materials Research Society
12 Conference Proceedings Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures

Buyanov, A. V., Sandberg, J., Bergman, J. P., Sernelius, B. E., Holtz, P-O., Monemar, B., Amano, H., Akasaki, I.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12