Influence of Growth Temperature on Emission Efficiency of InGaN/GaN Multiple Quantum Wells

Influence of Growth Temperature on Emission Efficiency of InGaN/GaN Multiple Quantum Wells

Author(s):

Chen, Fei

Publication title:

GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

693

Pub. Year:

2002

Page(from):

377

Page(to):

382

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996298 [155899629X]

Language:

English

Call no.:

M23500/693

Type:

Conference Proceedings

Details

TDL ID:	ZA00014569
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gan and related alloys
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.30

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