Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE
- Author(s):
Yamaguchi, Tomohiro Saito, Yoshiki Kano, Kenji Muramatsu, Tomo Araki, Tsutomu Nanishi, Yasushi Teraguchi, Nobuaki Suzuki, Akira - Publication title:
- GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 693
- Pub. Year:
- 2002
- Page(from):
- 195
- Page(to):
- 200
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996298 [155899629X]
- Language:
- English
- Call no.:
- M23500/693
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Trans Tech Publications |
2
Conference Proceedings
Bandgap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy
Materials Research Society |
Trans Tech Publications |
3
Conference Proceedings
Single Crystalline InN Films Grown on Si Substrates by Using a Brief Substrate Nitridation Process
Materials Research Society |
9
Conference Proceedings
Structural Characterization of Low-Temperature InN Buffer Layer Grown by RF-MBE
Materials Research Society |
Materials Research Society |
Materials Research Society |
5
Conference Proceedings
Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE
Materials Research Society |
Materials Research Society |
Materials Research Society |
12
Conference Proceedings
Correlation Between Resistivity and Yellow Luminescence Intensity of GaN Layers Grown by MOCVD
Materials Research Society |