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The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si

Author(s):
Tetelbaum, D,I.
Burdov, V.A.
Trushin, S.A.
Mikhaylov, A.N.
Revin, D.G.
Gaponova, D.M.
1 more
Publication title:
Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
692
Pub. Year:
2002
Page(from):
607
Page(to):
616
Pages:
10
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996281 [1558996281]
Language:
English
Call no.:
M23500/692
Type:
Conference Proceedings

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