Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

Author(s):

Publication title:

Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

692

Pub. Year:

2002

Page(from):

73

Page(to):

84

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996281 [1558996281]

Language:

English

Call no.:

M23500/692

Type:

Conference Proceedings

Details

TDL ID:	ZA00014568
Series ID:	PA00000011
Conf. info. (Name):	Symposium on progress in semiconductor materials for optoelectronic applications
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.29

Similar Items:

1 Conference Proceedings GaN deep-level capture barriers Johnstone,D.K., Ahoujja,M., Yeo,Y.K., Guido,L.J. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior Ahoujja, M., Crocket, H. C., Scott, M. B., Yeo, Y. K., Hengehold, R. L. Materials Research Society
2 Conference Proceedings Electrical and Optical Studies of Si-Implanted GaN Fellows, James A., Yeo, Yung Kee, Hengehold, Robert L., Krasnobaev, Leonid Materials Research Society	8 Conference Proceedings Luminescence study of the INTRA-4f emissions from GaAs:(Er+O) and AlxGa1-xAs:(Er+O) Colon, Jose E., Elsaesser, David W., Yeo, Yung Kee, Hengehold, Robert L., Pomrenke, Gernot S. MRS - Materials Research Society
3 Conference Proceedings Donor-Like Deep Level Defects in GaN Characterized by Double-Correlation Deep Level Transient Spectroscopy Ahoujja, Mo, Hogsed, M., Yeo, Y. K., Hengehold, R. L. Materials Research Society	9 Conference Proceedings Comparison of deep levels in GaN grown by MBE. MOCVD. and HVPE Johnstone, D., Biyikli, S., Dogan, S., Moon, Y.T., Yun, F., Morkoc, H. SPIE - The International Society of Optical Engineering
4 Conference Proceedings Electrical Characterization of As- and [As+Si]-Doped GaN Grown by Metalorganic Chemical Vapor Deposition Ahoujja, M., Elhamri, S., Berney, R., Yeo, Y. K., Hengehold, R. L. Materials Research Society	10 Conference Proceedings Neodymium and Erbium Implanted GaN Silkowski, E., Yeo, Y. K., Hengehold, R. L., Goldenberg, B., Pomrenke, G. S. MRS - Materials Research Society
5 Conference Proceedings Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN Hogsed, Michael R., Ahoujja, Mo, Ryu, Mee-Yi, Yeo, Yung Kee, Petrosky, James C., Hengehold, Robert L. Materials Research Society	11 Conference Proceedings Luminescence and annealing studies of Er-implanted GaN with and without oxygen co-doping Silkowski,E., Yeo,Y.K., Hengehold,R.L., Everitt,L.R. Trans Tech Publications
6 Conference Proceedings Annealing Study of Ion Implated MOCVD and MBE Grown GaN Silkowski, E., Yeo, Y. K., Hengehold, R. L., Khan, M. A., Lei, T., Evans, K., Cerny, C. MRS - Materials Research Society	12 Conference Proceedings Deep Level Defect Study of Ion Implanted(Ar,Mg,Cr)n-Type 6H-SiC by Deep Level Transient Spectroscopy Scott,M.B., Scofield,J.D., Yeo,Y.K., Hengehold,R.L. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12