The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Author(s):

Kurtz, Steven R.

Publication title:

Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

692

Pub. Year:

2002

Page(from):

21

Page(to):

28

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996281 [1558996281]

Language:

English

Call no.:

M23500/692

Type:

Conference Proceedings

Details

TDL ID:	ZA00014568
Series ID:	PA00000011
Conf. info. (Name):	Symposium on progress in semiconductor materials for optoelectronic applications
Conf. info. (Number):	2001
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2001.11.26-2001.11.29

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