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Diffusion Behavior of Ion-Implanted n-type Dopants in Silicon Germanium

Author(s):
Publication title:
Materials issues in novel si-based technology : symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
686
Pub. Year:
2002
Page(from):
33
Page(to):
38
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996229 [1558996222]
Language:
English
Call no.:
M23500/686
Type:
Conference Proceedings

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