A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon
- Author(s):
- Publication title:
- Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 669
- Pub. Year:
- 2001
- Pages:
- 6
- Pub. info.:
- Warrendale, PA: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996052 [1558996052]
- Language:
- English
- Call no.:
- M23500/669
- Type:
- Conference Proceedings
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