Application of Ultraviolet Radiation to Minimize Interfacial Layer Formation During the Growth of Alternate High-K Gate Dielectrics on Si

Application of Ultraviolet Radiation to Minimize Interfacial Layer Formation During the Growth of Alternate High-K Gate Dielectrics on Si

Author(s):

Craciun, V.

Publication title:

Transport and microstructural phenomena in oxide electronics : symposium held April 16-20, 2001, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

666

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996021 [1558996028]

Language:

English

Call no.:

M23500/666

Type:

Conference Proceedings

Details

TDL ID:	ZA00014549
Series ID:	PA00000011
Conf. info. (Name):	Symposium on transport and microstructural phenomena in oxide electronics
Conf. info. (Number):	2001
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2001.04.16-2001.04.20

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