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Microstructure and Physical Properties of Ferroelectric-gate Memory Capacitors with Various Buffer Layers

Author(s):
Caragianis-Broadbridge, Christine
Han, Jin-ping
Ma, T.P.
Lehma, Ann Hein
Zhu, Wenjuan
Luo, Zhijiong
Pechkis, Daniel L.
Laube, Bruce L.
3 more
Publication title:
Transport and microstructural phenomena in oxide electronics : symposium held April 16-20, 2001, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
666
Pub. Year:
2001
Pages:
6
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558996021 [1558996028]
Language:
English
Call no.:
M23500/666
Type:
Conference Proceedings

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