MEE-Grown InGaAs Quantum Dots Embedded in an InxGa1-xAs (x < 0.2) Matrix for 1.3 μm Emission

MEE-Grown InGaAs Quantum Dots Embedded in an InxGa1-xAs (x < 0.2) Matrix for 1.3 μm Emission

Author(s):

Publication title:

Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

642

Pub. Year:

2001

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995529 [1558995528]

Language:

English

Call no.:

M23500/642

Type:

Conference Proceedings

Details

TDL ID:	ZA00014528
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor quantum dots
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	2000.11.27-2000.11.30

Similar Items:

1 Conference Proceedings Low-threshold current low-resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE H. Yu, J. Wang, Y. Su, S. Chang, H. Kuo, F. Lai, Y. H. Chang, H. D. Yang SPIE - The International Society of Optical Engineering	7 Conference Proceedings Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy Park,Y.J., Hahn,C.K., Kim,K.M., Jung,S.K., Kim,E.K., Min,S.-K. SPIE-The International Society for Optical Engineering
2 Conference Proceedings *DIFFERENCES IN THE GROWTH MECHANISM OF InXGa1-X AS ON GaAs STUDIED BY THE ELECTRICAL PROPERTIES OF A10.3Ga0.7As/InXGa1-Xas HETEROSTRUCTURES (0.2 - X - 0.4) Schweizer, T., Kohler, K., Ganser, P., Heisinger, P., Rothemund, W. Materials Research Society	8 Conference Proceedings Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates Marcks von Wurtemberg, R., Sundgren, P., Berggren, J., Hammar, M., Ghisoni, M., Oscarsson, V., Odling, E., Malmquist, J. SPIE - The International Society of Optical Engineering
3 Conference Proceedings Growth of GaInNAs by plasma assisted molecular beam epitaxy Gotthold, David W., Govindaraju, Sridhar, Holmes, Archie L. Jr., Streetman, Ben G. MRS-Materials Research Society	9 Conference Proceedings 1.3 μm InAs/GaAs Quantum Dots Directly Capped With GaAs Grown By Metal Organic Chemical Vapor Deposition Huang, K. -F., Hsieh, T. -P., Yeh, N. -T., Ho, W. -J., Chyi, J. -I., Wu, M. -C. Materials Research Society
4 Conference Proceedings 1.3μm edge-and surface-emitting quantum dot lasers grown on GaAs substrates(Invited Paper) Ustinov, V.M., Zhukov, A.E., Maleev, N.A., Egorov, A.Yu., Kovsh, A.R., Mikhrin, S.S., Cherkashin, N.A., Shernyakov, … SPIE-The International Society for Optical Engineering	10 Conference Proceedings Development of 1.3 μm oxide-confined VCSELs grown by MOCVD Murray, C.S., Newman, F.D., Sun, S., Clevenger, J.B., Bossret, D. J., Wang, C.X., Hou, H.Q. SPIE-The International Society for Optical Engineering
5 Conference Proceedings 1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots - three candidates as active material P. Gilet, E. Pougeoise, L. Grenouillet, P. Grosse, N. Olivier, S. Poncet, A. Chelnokov, J. M. Gerard, R. Stevens, R. … SPIE - The International Society of Optical Engineering	11 Conference Proceedings In Situ Xas Study Of Li(1-z)Ni(1+z)O2(z-<0.02) Cathode Material Mansour, A. N., Q.Yang, X., Sun, X., McBreen, J., Croguennec, L., Delmas, C. Electrochemical Society
6 Conference Proceedings SiO2/PbTe quantum dots mutlilayers for the 1.3-1.5 μm region [6321-23] Rodriguez, E., Jimenez, E., Chillcce, F. E., Cesar, L. C., Barbosa, C. L. SPIE - The International Society of Optical Engineering	12 Conference Proceedings Spontaneous Emission and Lasing Characteristics of 1.3μ Quantum Dots Deppe, D.C., Huffaker, D.L., Shchekin, O., Csutak, S., Pork, G. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12